GaN Technology Engineer

Employment: Full-time Experience level: Mid-Senior Level Job Description We are seeking GaN Device Staff Engineer to drive next-generation high-efficiency power conversion technologies for emerging applications. In this role, you will participate throughout the full technology and product development cycle, from device concept and architecture development through technology qualification and product launch. Responsible for developing advanced GaN device structures and driving technology development through electrical characterization and data-driven analysis. A major focus will be the design and implementation of PCM (Process Control Monitor) test structures, troubleshooting process and device-related issues through PCM data analysis, and performing hands-on electrical testing to debug and resolve technical challenges. You will leverage a broad range of semiconductor test equipment and develop new characterization methodologies to investigate device dynamic behavior. The ideal candidate combines deep device physics knowledge with laboratory expertise, practical problem-solving skills. Working closely with device design, process integration, reliability, test, and product engineering teams, you will accelerate learning cycles and advance technology readiness for high-volume manufacturing.   A key responsibility of this role is to serve as a technical contributor in (1) hand-on device characterization and testing, (2) root-cause investigation, (3) PCM structure design and analysis and (4) technology troubleshooting. This is a high-visibility position offering the opportunity to make significant technical and business contributions while helping shape the future of GaN power semiconductor innovation.   Qualifications [Must] · M.S. or Ph.D. in Electrical Engineering, Semiconductor Physics/Engineering, or a related technical field w.i 3-7 years of experience in semiconductor device development, characterization, or technology engineering. · Strong understanding of semiconductor device physics and power device operation and experienced with GaN or other III-N compound technologies. ·  Extensive hands-on laboratory experience performing electrical characterization and device testing. Proficiency with semiconductor test equipment, such as parameter analyzers, SMUs/CMUs, curve tracers, oscilloscopes, pulse generators, probe stations. ·  Experience analyzing electrical data using Python, JMP, or similar statistical tools. ·  Good verbal and written communication skills in English. [Good to have] ·  Strong problem-solving skills and the ability to independently drive technical investigations. ·  Understanding of device reliability, degradation mechanisms, and qualification standard. Additional Information ルネサスは、「To Make Our Lives Easier（人々の暮らしをより豊かで快適にする）」というPurposeのもと、組込み半導体ソリューションを提供するグローバル企業です。世界30か国以上で活躍する21,000人を超えるエンジニアや課題解決のプロフェッショナルとともに、自動車、産業、インフラ、IoT分野における世界最先端のテクノロジー開発に携わり、より安全で、健康的で、環境にやさしく、スマートな未来の実現に貢献しています。    ルネサスでは、「TAGIE（Transparent、Agile、Global、Innovative、Entrepreneurial）」を企業文化の中核としています。TAGIEは、私たちの働き方や成長のあり方、そしてPurposeの実現に向けた取り組みを支える共通の価値観です。この協調的な精神と挑戦するマインドセットが、半導体技術を通じた産業の変革と、世界中の人々の暮らしへの貢献を可能にしています。    私たちは、競争力のある報酬制度に加え、充実した福利厚生をご用意しています。福利厚生の詳細については、選考プロセスの中でご案内いたします。    私たちとともに未来を創造する挑戦に、ぜひ参加しませんか。皆さまからのご応募をお待ちしております。