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Principal Medium Voltage (MV) Power MOSFET Process Integration Engineer

Renesas·Tokyo, Japan·via smartrecruiters
mid5+ yrsFull time
What the posting is about

Join Renesas' Medium Voltage Power Trench MOSFET team to design and develop next-gen shielded-gate trench MOSFET technologies. Collaborate with cross-functional teams and external partners to drive innovation and optimize performance. Requires Ph.D. or M.S. in Electrical Engineering, Physics, or related field, with up to 15 years of experience in power semiconductor device or process development. Proficiency in English and Japanese is essential.

Read out of the posting
Levelmid
Experience asked5+ years
EmploymentFull time
LocationTokyo, Japan
RemoteNot stated
Visa sponsorshipNot stated
SalaryNot published, and most postings do not
Posted2026-07-30
Found viasmartrecruiters, direct from their system

We saw it 2 months after it went up.

The posting, as the company wrote it
Employment: Full-time Experience level: Mid-Senior Level Job Description We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Team . The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with the design, application, and marketing teams, as well as external foundry partners, to drive innovation, optimize performance, and accelerate product industrialization. Key Responsibilities: Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology Set up key process modules required for the development of cutting-edge MV shielded-gate trench MOSFET technologies Perform wafer probing and analyze assembled product performance data for each development cycle Analyze wafer-level electrical test results and package-level performance data for each development iteration Support derivative technology development based on proven technology platforms Lead yield improvement activities and support technology transfer to mass production Contribute to the development of derivative products based on established and mature technology platforms Qualifications Ph.D. (preferred) or M.S. in Electrical Engineering, Physics, or a related field Up to 15 years of experience in power semiconductor device or process development, preferably with a focus on Si-based MV shielded-gate trench MOSFETs Solid understanding of power device physics and semiconductor fabrication processes Hands-on experience with TCAD tools and simulation-based device analysis Intermediate-level proficiency in both written and spoken English and Japanese Additional Information Renesas is an embedded semiconductor solution provider driven by its Purpose, To Make Our Lives Easier . With a global team of over 21,000 engineers and problem solvers in more than 30 countries, we offer the opportunity to work on world‑leading technology for Automotive, Industrial, Infrastructure, and IoT, shaping a safer, healthier, greener, and smarter future. At Renesas, TAGIE is our culture, grounded in being Transparent, Agile, Global, Innovative, and Entrepreneurial. It shapes how we work, grow and deliver on our purpose together. This collaborative spirit and mindset drive our semiconductor technology to transform industries and impact millions of lives. We believe in rewarding our employees with a competitive benefits package alongside their salary. More information will be provided during the hiring process. Are you ready to join our team and shape the future with us? Renesas Electronics is an equal opportunity and affirmative action employer, committed to supporting diversity and fostering a work environment free of discrimination on the basis of sex, race, religion, national origin, gender, gender identity, gender expression, age, sexual orientation, military status, veteran status, or any other basis protected by law. For more information, please read our  Diversity & Inclusion Statement .

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